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ALLIANCE MEMORY AS5F18G04SND-10LIN Flash Memory, NAND, 8 Gbit, 1G x 8bit, SPI, LGA, 8 Pins
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ALLIANCE MEMORY AS5F18G04SND-10LIN Flash Memory, NAND, 8 Gbit, 1G x 8bit, SPI, LGA, 8 Pins

ALLIANCE MEMORY AS5F18G04SND-10LIN Flash Memory, NAND, 8 Gbit, 1G x 8bit, SPI, LGA, 8 Pins

Product Overview

AS5F18G04SND-10LIN is a serial peripheral interface (SPI) NAND flash memory. SPI NAND provides a low cost and low pin count solution to alternate SPI-NOR in high density non-volatile memory storage solution for embedded systems. SPI NAND is a flash memory device with SLC NAND of the standard parallel NAND. The serial electrical interface follows the industry-standard serial peripheral interface. The command sets are similar to SPI-NOR command sets. Some modifications have been made for handling NAND-specific functions. Besides, new features are added to extend applications. The SPI NAND has 8 pin counts in total, including six signal lines plus VCC and GND. The density is 1Gbit through 8Gbit. Each block of the serial NAND is subdivided into 64 programmable pages. Each page consists of a data storage region and a spare area. The data storage region is used to store user-programmed data and the spare area is typically used for memory management and error correction functions.

  • Single-level cell (SLC) NAND flash, OTP protection, 64 pages one time programmable
  • Page program time:600us, page read time:70us for page size 2K, page read time:140us for page size 4K
  • 25mA read operation current/program operation current
  • Erase operation current is 30mA, 120uA maximum standby current
  • Endurance, P/E cycles: more than 60,000/cycles, 10/years data retention
  • Supply voltage is 1.8V, 8G-bits density
  • Quad SPI bus width
  • 100MHz speed
  • LGA-8 package
  • Industrial grade temperature range from -40°C to 85°C

Product details

Technical Specifications

Flash Memory Type

NAND

Memory Configuration

1G x 8bit

IC Case / Package

LGA

Clock Frequency Max

100MHz

Supply Voltage Min

1.7V

Supply Voltage Nom

1.8V

Operating Temperature Min

-40°C

Product Range

1.8V SPI NAND Flash Memories

SVHC

No SVHC (27-Jun-2024)

Memory Density

8Gbit

Interfaces

SPI

No. of Pins

8Pins

Access Time

-

Supply Voltage Max

1.98V

IC Mounting

Surface Mount

Operating Temperature Max

85°C

MSL

MSL 3 - 168 hours

Other details

Brand ALLIANCE MEMORY
Part Number AS5F18G04SND-10LIN
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$13.60

Original: $45.33

-70%
ALLIANCE MEMORY AS5F18G04SND-10LIN Flash Memory, NAND, 8 Gbit, 1G x 8bit, SPI, LGA, 8 Pins—

$45.33

$13.60

ALLIANCE MEMORY AS5F18G04SND-10LIN Flash Memory, NAND, 8 Gbit, 1G x 8bit, SPI, LGA, 8 Pins

Product Overview

AS5F18G04SND-10LIN is a serial peripheral interface (SPI) NAND flash memory. SPI NAND provides a low cost and low pin count solution to alternate SPI-NOR in high density non-volatile memory storage solution for embedded systems. SPI NAND is a flash memory device with SLC NAND of the standard parallel NAND. The serial electrical interface follows the industry-standard serial peripheral interface. The command sets are similar to SPI-NOR command sets. Some modifications have been made for handling NAND-specific functions. Besides, new features are added to extend applications. The SPI NAND has 8 pin counts in total, including six signal lines plus VCC and GND. The density is 1Gbit through 8Gbit. Each block of the serial NAND is subdivided into 64 programmable pages. Each page consists of a data storage region and a spare area. The data storage region is used to store user-programmed data and the spare area is typically used for memory management and error correction functions.

  • Single-level cell (SLC) NAND flash, OTP protection, 64 pages one time programmable
  • Page program time:600us, page read time:70us for page size 2K, page read time:140us for page size 4K
  • 25mA read operation current/program operation current
  • Erase operation current is 30mA, 120uA maximum standby current
  • Endurance, P/E cycles: more than 60,000/cycles, 10/years data retention
  • Supply voltage is 1.8V, 8G-bits density
  • Quad SPI bus width
  • 100MHz speed
  • LGA-8 package
  • Industrial grade temperature range from -40°C to 85°C

Product details

Technical Specifications

Flash Memory Type

NAND

Memory Configuration

1G x 8bit

IC Case / Package

LGA

Clock Frequency Max

100MHz

Supply Voltage Min

1.7V

Supply Voltage Nom

1.8V

Operating Temperature Min

-40°C

Product Range

1.8V SPI NAND Flash Memories

SVHC

No SVHC (27-Jun-2024)

Memory Density

8Gbit

Interfaces

SPI

No. of Pins

8Pins

Access Time

-

Supply Voltage Max

1.98V

IC Mounting

Surface Mount

Operating Temperature Max

85°C

MSL

MSL 3 - 168 hours

Other details

Brand ALLIANCE MEMORY
Part Number AS5F18G04SND-10LIN
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product Overview

AS5F18G04SND-10LIN is a serial peripheral interface (SPI) NAND flash memory. SPI NAND provides a low cost and low pin count solution to alternate SPI-NOR in high density non-volatile memory storage solution for embedded systems. SPI NAND is a flash memory device with SLC NAND of the standard parallel NAND. The serial electrical interface follows the industry-standard serial peripheral interface. The command sets are similar to SPI-NOR command sets. Some modifications have been made for handling NAND-specific functions. Besides, new features are added to extend applications. The SPI NAND has 8 pin counts in total, including six signal lines plus VCC and GND. The density is 1Gbit through 8Gbit. Each block of the serial NAND is subdivided into 64 programmable pages. Each page consists of a data storage region and a spare area. The data storage region is used to store user-programmed data and the spare area is typically used for memory management and error correction functions.

  • Single-level cell (SLC) NAND flash, OTP protection, 64 pages one time programmable
  • Page program time:600us, page read time:70us for page size 2K, page read time:140us for page size 4K
  • 25mA read operation current/program operation current
  • Erase operation current is 30mA, 120uA maximum standby current
  • Endurance, P/E cycles: more than 60,000/cycles, 10/years data retention
  • Supply voltage is 1.8V, 8G-bits density
  • Quad SPI bus width
  • 100MHz speed
  • LGA-8 package
  • Industrial grade temperature range from -40°C to 85°C

Product details

Technical Specifications

Flash Memory Type

NAND

Memory Configuration

1G x 8bit

IC Case / Package

LGA

Clock Frequency Max

100MHz

Supply Voltage Min

1.7V

Supply Voltage Nom

1.8V

Operating Temperature Min

-40°C

Product Range

1.8V SPI NAND Flash Memories

SVHC

No SVHC (27-Jun-2024)

Memory Density

8Gbit

Interfaces

SPI

No. of Pins

8Pins

Access Time

-

Supply Voltage Max

1.98V

IC Mounting

Surface Mount

Operating Temperature Max

85°C

MSL

MSL 3 - 168 hours

Other details

Brand ALLIANCE MEMORY
Part Number AS5F18G04SND-10LIN
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
ALLIANCE MEMORY AS5F18G04SND-10LIN Flash Memory, NAND, 8 Gbit, 1G x 8bit, SPI, LGA, 8 Pins | Tanotis