BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin
BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin
- High PDE (63% at 420nm), 4-side tileable, with high fill factors
- Highly transparent epoxy protection layer, excellent SPTR and CRT
- Excellent uniformity of breakdown voltage and gain between devices
- Photo-detection efficiency is 63% typical
- Spectral range is 250nm typical
- Breakdown voltage is 32.5V typical
- Temperature coefficient of breakdown voltage is 30mV/°C typical
- Nominal terminal capacitance is 580pF typical
- Operating temperature range from -20°C to +60°C
Product details
Other details
| Brand | BROADCOM |
| Part Number | AFBR-S4N44P014M |
| Quantity | Each |
| Technical Data Sheet EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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BROADCOM AFBR-S4N44P014M Silicon Photomultiplier, 3.72mm Ã� 3.62mm, 40µm/8334Microcells, 420nm, SMD, 5 Pin
- High PDE (63% at 420nm), 4-side tileable, with high fill factors
- Highly transparent epoxy protection layer, excellent SPTR and CRT
- Excellent uniformity of breakdown voltage and gain between devices
- Photo-detection efficiency is 63% typical
- Spectral range is 250nm typical
- Breakdown voltage is 32.5V typical
- Temperature coefficient of breakdown voltage is 30mV/°C typical
- Nominal terminal capacitance is 580pF typical
- Operating temperature range from -20°C to +60°C
Product details
Other details
| Brand | BROADCOM |
| Part Number | AFBR-S4N44P014M |
| Quantity | Each |
| Technical Data Sheet EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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Product Information
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Description
- High PDE (63% at 420nm), 4-side tileable, with high fill factors
- Highly transparent epoxy protection layer, excellent SPTR and CRT
- Excellent uniformity of breakdown voltage and gain between devices
- Photo-detection efficiency is 63% typical
- Spectral range is 250nm typical
- Breakdown voltage is 32.5V typical
- Temperature coefficient of breakdown voltage is 30mV/°C typical
- Nominal terminal capacitance is 580pF typical
- Operating temperature range from -20°C to +60°C
Product details
Other details
| Brand | BROADCOM |
| Part Number | AFBR-S4N44P014M |
| Quantity | Each |
| Technical Data Sheet EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.











