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INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus
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INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus

INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

89A

Drain Source On State Resistance

0.033ohm

No. of Pins

4Pins

Gate Source Threshold Voltage Max

5.5V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

2kV

Transistor Case Style

TO-247 Plus

Rds(on) Test Voltage

18V

Power Dissipation

576W

Product Range

CoolSiC Series

Other details

Brand INFINEON
Part Number IMYH200R024M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$54.00
INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus—
$54.00

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INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus - Image 2

INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

89A

Drain Source On State Resistance

0.033ohm

No. of Pins

4Pins

Gate Source Threshold Voltage Max

5.5V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

2kV

Transistor Case Style

TO-247 Plus

Rds(on) Test Voltage

18V

Power Dissipation

576W

Product Range

CoolSiC Series

Other details

Brand INFINEON
Part Number IMYH200R024M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

89A

Drain Source On State Resistance

0.033ohm

No. of Pins

4Pins

Gate Source Threshold Voltage Max

5.5V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

2kV

Transistor Case Style

TO-247 Plus

Rds(on) Test Voltage

18V

Power Dissipation

576W

Product Range

CoolSiC Series

Other details

Brand INFINEON
Part Number IMYH200R024M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IMYH200R024M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 89 A, 2 kV, 0.033 ohm, TO-247 Plus | Tanotis