🎉 Up to 70% Off Selected ItemsShop Sale
INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V
HomeStore

INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V

INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V

The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage (Vds) of 200V
  • Gate to source voltage of �20V
  • On resistance Rds(on) of 75mohm at Vgs 10V
  • Power dissipation Pd of 214W at 25�C
  • Continuous drain current Id of 30A at Vgs 10V and 25�C
  • Operating junction temperature range from -55�C to 175�C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product details

Power Dissipation Pd 214W
Operating Temperature Max 175�C
Continuous Drain Current Id 30A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 4V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 200V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-247AC
On Resistance Rds(on) 0.075ohm
MSL -

Other details

Brand INFINEON
Part Number IRFP250NPBF
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
  Download technical document - datasheet - Tanotis India
Application Note EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

$1.59

Original: $5.29

-70%
INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V

$5.29

$1.59

INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V

The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage (Vds) of 200V
  • Gate to source voltage of �20V
  • On resistance Rds(on) of 75mohm at Vgs 10V
  • Power dissipation Pd of 214W at 25�C
  • Continuous drain current Id of 30A at Vgs 10V and 25�C
  • Operating junction temperature range from -55�C to 175�C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product details

Power Dissipation Pd 214W
Operating Temperature Max 175�C
Continuous Drain Current Id 30A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 4V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 200V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-247AC
On Resistance Rds(on) 0.075ohm
MSL -

Other details

Brand INFINEON
Part Number IRFP250NPBF
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
  Download technical document - datasheet - Tanotis India
Application Note EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Product Information

Shipping & Returns

Description

The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage (Vds) of 200V
  • Gate to source voltage of �20V
  • On resistance Rds(on) of 75mohm at Vgs 10V
  • Power dissipation Pd of 214W at 25�C
  • Continuous drain current Id of 30A at Vgs 10V and 25�C
  • Operating junction temperature range from -55�C to 175�C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product details

Power Dissipation Pd 214W
Operating Temperature Max 175�C
Continuous Drain Current Id 30A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 4V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 200V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-247AC
On Resistance Rds(on) 0.075ohm
MSL -

Other details

Brand INFINEON
Part Number IRFP250NPBF
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
  Download technical document - datasheet - Tanotis India
Application Note EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V | Tanotis