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INFINEON IRFB260NPBF MOSFET Transistor, N Channel, 56 A, 200 V, 40 mohm, 10 V, 4 V

INFINEON IRFB260NPBF MOSFET Transistor, N Channel, 56 A, 200 V, 40 mohm, 10 V, 4 V

The IRFB260NPBF is a 200V single N-channel HEXFET� Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • Low gate-to-drain charge to reduce switching losses
  • Fully characterized capacitance including effective COSS to simplify design
  • Fully characterized avalanche voltage and current

Applications

Power Management

Product details

Power Dissipation Pd 380W
Operating Temperature Max 175�C
Continuous Drain Current Id 56A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 4V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 200V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220AB
On Resistance Rds(on) 0.04ohm
MSL -

Other details

Brand INFINEON
Part Number IRFB260NPBF
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

$1.67

Original: $5.57

-70%
INFINEON IRFB260NPBF MOSFET Transistor, N Channel, 56 A, 200 V, 40 mohm, 10 V, 4 V

$5.57

$1.67

INFINEON IRFB260NPBF MOSFET Transistor, N Channel, 56 A, 200 V, 40 mohm, 10 V, 4 V

The IRFB260NPBF is a 200V single N-channel HEXFET� Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • Low gate-to-drain charge to reduce switching losses
  • Fully characterized capacitance including effective COSS to simplify design
  • Fully characterized avalanche voltage and current

Applications

Power Management

Product details

Power Dissipation Pd 380W
Operating Temperature Max 175�C
Continuous Drain Current Id 56A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 4V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 200V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220AB
On Resistance Rds(on) 0.04ohm
MSL -

Other details

Brand INFINEON
Part Number IRFB260NPBF
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Product Information

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Description

The IRFB260NPBF is a 200V single N-channel HEXFET� Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • Low gate-to-drain charge to reduce switching losses
  • Fully characterized capacitance including effective COSS to simplify design
  • Fully characterized avalanche voltage and current

Applications

Power Management

Product details

Power Dissipation Pd 380W
Operating Temperature Max 175�C
Continuous Drain Current Id 56A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 4V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 200V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220AB
On Resistance Rds(on) 0.04ohm
MSL -

Other details

Brand INFINEON
Part Number IRFB260NPBF
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

INFINEON IRFB260NPBF MOSFET Transistor, N Channel, 56 A, 200 V, 40 mohm, 10 V, 4 V | Tanotis