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Ixys Semiconductor DSEI30-06A Fast / Ultrafast Diode 600 V 37 A Single 1.6 50 ns 300
DSEI30-06A is a single fast recovery epitaxial diode. Typical applications are antiparallel diode for high frequency switching devices, antisaturation diode, snubber diode, free wheeling diode, rectifiers in switch mode power supplies (SMPS), uninterruptible power supplies (UPS).
- Planar passivated chips, low leakage current
- Very short recovery time, improved thermal behaviour
- Very low Irm-values, very soft recovery behaviour
- Avalanche voltage rated for reliable operation, epoxy meets UL 94V-0
- Soft reverse recovery for low EMI/RFI, industry standard outline
- TO-247 package
- Maximum non-repetitive reverse blocking voltage is 600V (T = 25°C)
- Average forward current is 30A (TC = 110°C, TVJ = 150°C)
- Reverse recovery time is 80ns at TVJ = 25°C, VR = 350V, IF=37A
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | DSEI30-06A |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
$2.92
Original: $9.73
-70%Ixys Semiconductor DSEI30-06A Fast / Ultrafast Diode 600 V 37 A Single 1.6 50 ns 300—
$9.73
$2.92Ixys Semiconductor DSEI30-06A Fast / Ultrafast Diode 600 V 37 A Single 1.6 50 ns 300
DSEI30-06A is a single fast recovery epitaxial diode. Typical applications are antiparallel diode for high frequency switching devices, antisaturation diode, snubber diode, free wheeling diode, rectifiers in switch mode power supplies (SMPS), uninterruptible power supplies (UPS).
- Planar passivated chips, low leakage current
- Very short recovery time, improved thermal behaviour
- Very low Irm-values, very soft recovery behaviour
- Avalanche voltage rated for reliable operation, epoxy meets UL 94V-0
- Soft reverse recovery for low EMI/RFI, industry standard outline
- TO-247 package
- Maximum non-repetitive reverse blocking voltage is 600V (T = 25°C)
- Average forward current is 30A (TC = 110°C, TVJ = 150°C)
- Reverse recovery time is 80ns at TVJ = 25°C, VR = 350V, IF=37A
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | DSEI30-06A |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
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Product Information
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Description
DSEI30-06A is a single fast recovery epitaxial diode. Typical applications are antiparallel diode for high frequency switching devices, antisaturation diode, snubber diode, free wheeling diode, rectifiers in switch mode power supplies (SMPS), uninterruptible power supplies (UPS).
- Planar passivated chips, low leakage current
- Very short recovery time, improved thermal behaviour
- Very low Irm-values, very soft recovery behaviour
- Avalanche voltage rated for reliable operation, epoxy meets UL 94V-0
- Soft reverse recovery for low EMI/RFI, industry standard outline
- TO-247 package
- Maximum non-repetitive reverse blocking voltage is 600V (T = 25°C)
- Average forward current is 30A (TC = 110°C, TVJ = 150°C)
- Reverse recovery time is 80ns at TVJ = 25°C, VR = 350V, IF=37A
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | DSEI30-06A |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
