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VISHAY IRFBG30PBF Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- 175Ā°C Operating Temperature
Applications
Audio, Signal Processing, Industrial
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 1kV |
| Continuous Drain Current Id: 3.1A |
| Drain Source On State Resistance: 5ohm |
| Transistor Case Style: TO-220AB |
| Transistor Mounting: Through Hole |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 4V |
| Power Dissipation: 125W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150Ā°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | VISHAY |
| Part Number | IRFBG30PBF |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarksā¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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-70%VISHAY IRFBG30PBF Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Holeā
$3.74
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VISHAY IRFBG30PBF Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- 175Ā°C Operating Temperature
Applications
Audio, Signal Processing, Industrial
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 1kV |
| Continuous Drain Current Id: 3.1A |
| Drain Source On State Resistance: 5ohm |
| Transistor Case Style: TO-220AB |
| Transistor Mounting: Through Hole |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 4V |
| Power Dissipation: 125W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150Ā°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | VISHAY |
| Part Number | IRFBG30PBF |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarksā¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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Product Information
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Description
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- 175Ā°C Operating Temperature
Applications
Audio, Signal Processing, Industrial
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 1kV |
| Continuous Drain Current Id: 3.1A |
| Drain Source On State Resistance: 5ohm |
| Transistor Case Style: TO-220AB |
| Transistor Mounting: Through Hole |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 4V |
| Power Dissipation: 125W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150Ā°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | VISHAY |
| Part Number | IRFBG30PBF |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarksā¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
