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INFINEON IMT65R057M1HXUMA1 Silicon Carbide MOSFET, N Channel, 44 A, 650 V, 0.057 ohm, HSOF SP005716844
INFINEON IMT65R057M1HXUMA1 Silicon Carbide MOSFET, N Channel, 44 A, 650 V, 0.057 ohm, HSOF SP005716844
Product details
| MOSFET Module Configuration: - |
| Channel Type: N Channel |
| Continuous Drain Current Id: 44A |
| Drain Source Voltage Vds: 650V |
| Drain Source On State Resistance: 0.057ohm |
| Transistor Case Style: HSOF |
| No. of Pins: 8Pins |
| Rds(on) Test Voltage: 18V |
| Gate Source Threshold Voltage Max: 5.7V |
| Power Dissipation: 203W |
| Operating Temperature Max: 175Ā°C |
| Product Range: CoolSiC Trench Series |
Other details
| Brand | INFINEON |
| Part Number | IMT65R057M1HXUMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
All product and company names are trademarksā¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$10.34
INFINEON IMT65R057M1HXUMA1 Silicon Carbide MOSFET, N Channel, 44 A, 650 V, 0.057 ohm, HSOF SP005716844ā
$10.34
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INFINEON IMT65R057M1HXUMA1 Silicon Carbide MOSFET, N Channel, 44 A, 650 V, 0.057 ohm, HSOF SP005716844
Product details
| MOSFET Module Configuration: - |
| Channel Type: N Channel |
| Continuous Drain Current Id: 44A |
| Drain Source Voltage Vds: 650V |
| Drain Source On State Resistance: 0.057ohm |
| Transistor Case Style: HSOF |
| No. of Pins: 8Pins |
| Rds(on) Test Voltage: 18V |
| Gate Source Threshold Voltage Max: 5.7V |
| Power Dissipation: 203W |
| Operating Temperature Max: 175Ā°C |
| Product Range: CoolSiC Trench Series |
Other details
| Brand | INFINEON |
| Part Number | IMT65R057M1HXUMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
All product and company names are trademarksā¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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Description
Product details
| MOSFET Module Configuration: - |
| Channel Type: N Channel |
| Continuous Drain Current Id: 44A |
| Drain Source Voltage Vds: 650V |
| Drain Source On State Resistance: 0.057ohm |
| Transistor Case Style: HSOF |
| No. of Pins: 8Pins |
| Rds(on) Test Voltage: 18V |
| Gate Source Threshold Voltage Max: 5.7V |
| Power Dissipation: 203W |
| Operating Temperature Max: 175Ā°C |
| Product Range: CoolSiC Trench Series |
Other details
| Brand | INFINEON |
| Part Number | IMT65R057M1HXUMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
All product and company names are trademarksā¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
