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INFINEON IMW65R010M2HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 130 A, 650 V, 0.0131 ohm, TO-247
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INFINEON IMW65R010M2HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 130 A, 650 V, 0.0131 ohm, TO-247

INFINEON IMW65R010M2HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 130 A, 650 V, 0.0131 ohm, TO-247

Product details

Technical Specifications

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MOSFET Module Configuration

Single

Continuous Drain Current Id
130A
Open menu
Drain Source On State Resistance
0.0131ohm
Open menu
No. of Pins
3Pins
Open menu
Gate Source Threshold Voltage Max

5.6V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

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Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style
TO-247
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
440W
Open menu
Product Range

CoolSiC G2 Series

Other details

Brand INFINEON
Part Number IMW65R010M2HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$9.06

Original: $30.21

-70%
INFINEON IMW65R010M2HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 130 A, 650 V, 0.0131 ohm, TO-247—

$30.21

$9.06

INFINEON IMW65R010M2HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 130 A, 650 V, 0.0131 ohm, TO-247

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
130A
Open menu
Drain Source On State Resistance
0.0131ohm
Open menu
No. of Pins
3Pins
Open menu
Gate Source Threshold Voltage Max

5.6V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style
TO-247
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
440W
Open menu
Product Range

CoolSiC G2 Series

Other details

Brand INFINEON
Part Number IMW65R010M2HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
130A
Open menu
Drain Source On State Resistance
0.0131ohm
Open menu
No. of Pins
3Pins
Open menu
Gate Source Threshold Voltage Max

5.6V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style
TO-247
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
440W
Open menu
Product Range

CoolSiC G2 Series

Other details

Brand INFINEON
Part Number IMW65R010M2HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IMW65R010M2HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 130 A, 650 V, 0.0131 ohm, TO-247 | Tanotis