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INFINEON IPD80R1K4CEATMA1 Power MOSFET, N Channel, 800 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount IPD80R1K4CE, SP001130972
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INFINEON IPD80R1K4CEATMA1 Power MOSFET, N Channel, 800 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount IPD80R1K4CE, SP001130972

INFINEON IPD80R1K4CEATMA1 Power MOSFET, N Channel, 800 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount IPD80R1K4CE, SP001130972

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 800V
Continuous Drain Current Id: 3.9A
Drain Source On State Resistance: 1.2ohm
Transistor Case Style: TO-252 (DPAK)
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3V
Power Dissipation: 63W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: CoolMOS CE
Qualification: -
MSL: MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPD80R1K4CEATMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$2.59
INFINEON IPD80R1K4CEATMA1 Power MOSFET, N Channel, 800 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount IPD80R1K4CE, SP001130972—
$2.59

INFINEON IPD80R1K4CEATMA1 Power MOSFET, N Channel, 800 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount IPD80R1K4CE, SP001130972

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 800V
Continuous Drain Current Id: 3.9A
Drain Source On State Resistance: 1.2ohm
Transistor Case Style: TO-252 (DPAK)
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3V
Power Dissipation: 63W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: CoolMOS CE
Qualification: -
MSL: MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPD80R1K4CEATMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

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Description

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 800V
Continuous Drain Current Id: 3.9A
Drain Source On State Resistance: 1.2ohm
Transistor Case Style: TO-252 (DPAK)
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3V
Power Dissipation: 63W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: CoolMOS CE
Qualification: -
MSL: MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPD80R1K4CEATMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IPD80R1K4CEATMA1 Power MOSFET, N Channel, 800 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount IPD80R1K4CE, SP001130972 | Tanotis