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ROHM SCT2H12NZGC11 Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
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ROHM SCT2H12NZGC11 Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

ROHM SCT2H12NZGC11 Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 3.7A
Drain Source Voltage Vds: 1.7kV
Drain Source On State Resistance: 1.15ohm
Transistor Case Style: TO-3PFM
No. of Pins: 3Pins
Rds(on) Test Voltage: 18V
Gate Source Threshold Voltage Max: 2.8V
Power Dissipation: 35W
Operating Temperature Max: 175°C
Product Range: -
MSL: MSL 1 - Unlimited

Other details

Brand ROHM
Part Number SCT2H12NZGC11
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$12.81
ROHM SCT2H12NZGC11 Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V—
$12.81

ROHM SCT2H12NZGC11 Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 3.7A
Drain Source Voltage Vds: 1.7kV
Drain Source On State Resistance: 1.15ohm
Transistor Case Style: TO-3PFM
No. of Pins: 3Pins
Rds(on) Test Voltage: 18V
Gate Source Threshold Voltage Max: 2.8V
Power Dissipation: 35W
Operating Temperature Max: 175°C
Product Range: -
MSL: MSL 1 - Unlimited

Other details

Brand ROHM
Part Number SCT2H12NZGC11
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

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Description

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 3.7A
Drain Source Voltage Vds: 1.7kV
Drain Source On State Resistance: 1.15ohm
Transistor Case Style: TO-3PFM
No. of Pins: 3Pins
Rds(on) Test Voltage: 18V
Gate Source Threshold Voltage Max: 2.8V
Power Dissipation: 35W
Operating Temperature Max: 175°C
Product Range: -
MSL: MSL 1 - Unlimited

Other details

Brand ROHM
Part Number SCT2H12NZGC11
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarksā„¢ or registeredĀ® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
ROHM SCT2H12NZGC11 Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V | Tanotis